Product Summary

The MG15Q6ES40 is an N channel IGBT.

Parametrics

MG15Q6ES40 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector current: 15A; (4)forward current: 15A; (5)collector power dissipation: 125W; (6)junction temperature: 150℃; (7)storage temperature range: -40 to 125℃; (8)isolation voltage: 2500V.

Features

MG15Q6ES40 features: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)enhancement-mode; (4)low saturation voltage: 4.0V; (5)high speed: 0.5us.

Diagrams

MG15Q6ES40 block diagram