Product Summary

The MBN800E33D is an IGBT module.

Parametrics

MBN800E33D absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 3,300V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 800A; 1ms, ICp: 1,600A; (4)Forward Current, DC, IF: 800A; 1ms, IFM: 1,600A; (5)Junction Temperature, Tj: -40 to +125℃; (6)Storage Temperature, Tstg: -40 to +125℃; (7)Isolation Voltage, VISO, VRMS: 6,000(AC 1 minute).

Features

MBN800E33D features: (1)High speed, low loss IGBT module; (2)Low driving power due to low input capacitance MOS gate; (3)Low noise due to ultra soft fast recovery diode; (4)High reliability, high durability module; (5)High thermal fatigue durability (delta Tc=70℃, N>30,000 cycles); (6)Isolated heat sink (terminal to base).

Diagrams

MBN800E33D block diagram