(China (Mainland))
Product Summary
The MUBW35-12A7 is a Converter-Brake-Inverter Module.
Parametrics
MUBW35-12A7 absolute maximum ratings: (1)VRRM: 1600 V; (2)IFAV TC = 80℃; sine 180°: 30 A; (3)IDAVM TC = 80℃; rectangular; d = 1/3; bridge: 80 A; (4)IFSM TVJ = 25℃; t = 10 ms; sine 50 Hz: 300 A; (5)Ptot; (6)TC = 25℃: 100 W.
Features
MUBW35-12A7 features: (1)High level of integration - only one power semiconductor module required for the whole drive; (2)NPT IGBT technology with low saturation voltage, low switching; (3)losses, high RBSOA and short circuit ruggedness; (4)Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery; (5)Industry standard package with insulated copper base plate and soldering pins for PCB mounting; (6)Temperature sense included.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MUBW35-12A7 |
Ixys |
Discrete Semiconductor Modules 35 Amps 1200V |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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MUBW100-06A8 |
Ixys |
Discrete Semiconductor Modules 100 Amps 600V |
Data Sheet |
Negotiable |
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MUBW10-06A6 |
|
MODULE IGBT CBI E1 |
Data Sheet |
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MUBW10-06A6K |
Ixys |
Discrete Semiconductor Modules NPT IGBT 600V, 10A |
Data Sheet |
Negotiable |
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 |
MUBW10-06A7 |
Ixys |
Discrete Semiconductor Modules 10 Amps 600V |
Data Sheet |
Negotiable |
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MUBW10-12 |
Other |
|
Data Sheet |
Negotiable |
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MUBW10-12A6 |
Other |
|
Data Sheet |
Negotiable |
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