Product Summary

The CPV364M4K is an IGBT SIP module. The IGBT technology is the key to International Rectifier’s advanced line of IMS (Insulated Metal Substrate) Power Modules. The CPV364M4K is more efficient than comparable bipolar transistor module, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. The CPV364M4K’s package is highly suited to motor drive applications and where space is at a premium.

Parametrics

CPV364M4K absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃, Continuous Collector Current: 24A; (3)IC @ TC = 100℃, Continuous Collector Current: 13 A; (4)ICM, Pulsed Collector Current: 48A; (5)ILM, Clamped Inductive Load Current: 48A; (6)tsc, Short Circuit Withstand Time: 9.3μs; (7)VGE, Gate-to-Emitter Voltage: ±20 V; (8)VISOL, Isolation Voltage, any terminal to case, 1 min: 2500 VRMS; (9)PD @ TC = 25℃, Maximum Power Dissipation, each IGBT: 63 W; (10)PD @ TC = 100℃, Maximum Power Dissipation, each IGBT: 25W; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃; (12)Soldering Temperature, for 10 sec. 300℃; (13)Mounting torque, 6-32 or M3 screw: 5-7 lbf.in.

Features

CPV364M4K features: (1)Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10μs @ 125℃, VGE = 15V; (2)Fully isolated printed circuit board mount package; (3)Switching-loss rating includes all tail losses; (4)HEXFREDTM soft ultrafast diodes; (5)Optimized for high operating frequency (over 5kHz).

Diagrams

CPV364M4K block diagram

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CPV364M4K
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Data Sheet

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CPV364M4KPBF
CPV364M4KPBF


IGBT SIP MODULE 600V 13A IMS-2

Data Sheet

0-160: $22.70