Product Summary

The FDS8884 is an N-Channel MOSFET. It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDS8884 has been optimized for low gate charge, low rDS(on) and fast switching speed.

Parametrics

FDS8884 absolute maximum ratings: (1)VDS, Drain to Source Voltage: 30 V; (2)VGS, Gate to Source Voltage: ±20 V; (3)ID, Drain Current: 8.5 A; (4)EAS Single Pulse Avalanche Energy: 32 mJ; (5)PD, Power dissipation: 2.5 W; (6)TJ, TSTG, Operating and Storage Temperature: -55 to 150℃.

Features

FDS8884 features: (1)Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A; (2)Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A; (3)Low gate charge; (4)100% RG Tested; (5)RoHS Compliant.

Diagrams

FDS8884 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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0-1: $1.01
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