Product Summary

The SKM200GAL123DKLD110 is a SPT IGBT Module.

Parametrics

SKM200GAL123DKLD110 absolute maximum ratings: (1)VCES: 1200V; (2)IC: 300A; (3)ICRM: 300A; (4)VGES: ±20V; (5)tpsc: 10μS; (6)IF: 200A; (7)IFRM: 300A; (8)IFSM: 1440A; (9)It: 500A; (10)Tvj: -40 to 150℃; (11)Tstg: -40 to 125℃; (12)Visol: 2500V.

Features

SKM200GAL123DKLD110 features: (1)MOS input; (2)N channel, homogeneous Si; (3)Low inductance case; (4)Very low tail current with low temperature dependence; (5)High short circuit capability, self limiting to 6*Icnom; (6)Latch up free; (7)Fast soft inverse CAL diodes; (8)Isolated copper baseplate using DCB Direct Copper Bonding Technology; (9)Large clearance and creepage distances.

Diagrams

SKM200GAL123DKLD110 block diagram

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SKM200GAL123DKLD110
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Image Part No Mfg Description Data Sheet Download Pricing
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SKM200GAL123DKLD110
SKM200GAL123DKLD110

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