Product Summary

The SKM100GAR123D is an IGBT Module. The application of the SKM100GAR123D includes switching (not for linear use).

Parametrics

SKM100GAR123D absolute maximum ratings: (1)VCES: 1200 V; (2)IC: 100 (90) A at Tc=25 (80) ℃; (3)ICRM: 150 A at tp=1 ms; (4)VGES: ± 20 V; (5)Tvj,(Tstg): -40 to +150 ℃ at TOPERATION ≤ Tstg; (6)Visol: 2500 V at AC, 1 min; (7)IF: 95 (65) A at Tc=25 (80) ℃; (8)IFRM: 150 A at tp=1 ms; (9)IFSM: 720 A at tp=10 ms; sin,;Tj=150 ℃.

Features

SKM100GAR123D features: (1)MOS input (voltage controlled); (2)N channel,homogeneous Si; (3)low inductance case; (4)very low tail current with low temperature dependecnce; (5)high short circuit capability,self limiting to 6×Icnom; (6)latch-up free; (7)fast & soft inverse CAL diodes; (8)isolated copper baseplate using DCB direct copper bonding technology; (9)large clearance (10 mm) and creepage distances (20 mm).

Diagrams

SKM100GAR123D block diagram