(China (Mainland))
Product Summary
The BSM300GAL120DN2 is an IGBT-Module.
Parametrics
BSM300GAL120DN2 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, TC = 80℃, IC,nom.: 300 A; TC = 25℃, IC: 625 A; (3)repetitive peak collector current, tP = 1 ms, TC = 80℃, ICRM: 600 A; (4)total power dissipation, TC=25℃, Transistor Ptot: 2,5 kW; (5)gate-emitter peak voltage, VGES: ±20V; (6)DC forward current, IF: 300 A; (7)repetitive peak forw. current, tP = 1 ms, IFRM: 600 A; (8)I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125℃, I2t: 19 kA2s; (9)insulation test voltage, RMS, f = 50 Hz, t = 1 min., VISOL: 2,5 kV.
Features
BSM300GAL120DN2 features: (1)Collector-emitter saturation voltage, IC = 300A, VGE = 15V, Tvj; (2) = 125℃: -2.4 to 2.9 V; (3)gate threshold voltage, IC = 12mA, VCE = VGE, Tvj = 25℃, VGE(th): 4,5 to 6,5 V; (4)gate charge, VGE = -15V to +15V, QG: 3,2μC; (5)input capacitance, f = 1MHz, Tvj = 25℃, VCE = 25V, VGE = 0V Cies: 21nF; (6)collector-emitter cut-off current, VCE = 1200V, VGE = 0V, Tvj; (7) = 125℃: 800μA; (8)gate-emitter leakage current, VCE = 0V, VGE = 20V, Tvj = 25℃ IGES: 350 nA.
Diagrams
