Product Summary

The MG20G6EL1 is a silicon NPN triple diffused type collector. The applications of MG20G6EL1 are high power switching and motor control. .

Parametrics

MG20G6EL1 absolute maximum ratings: (1)collector-base voltage: 600V; (2)collector-emitter sustaining voltage: 600V; (3)collector-emitter sustaining voltage: 450V; (4)emitter-base voltage: 6V; (5)base current: 2A; (6)collector power dissipation: 125W; (7)junction temperature: 150℃; (8)storage temperature range: -40℃ to +125℃.

Features

MG20G6EL1 features: (1)the collector is isolated from case; (2)4 or 6 darlington transistors including free wheeling diodes are built-in to 1 package; (3)high DC current gain:hFE=100(min.)(IC=20A); (4)low satulation voltage:VCE(sat)=2V(max.)(IC=20A).

Diagrams

MG20G6EL1 block diagram