(China (Mainland))
Product Summary
The MG75Q2YS1 is a Silicon N Channel IGBT module.
Parametrics
MG75Q2YS1 absolute maximum ratings: (1)Collector emitter Voltage VCES: 1200V; (2)Gate Emitter Voltage VGES: ±20V; (3)Collector Current, DC IC: 75A; 1ms ICP: 150A; (4)Collector Power dissipation, Pc: 560W; (5)junction Temperature, Tj: 150℃; (6)Storage Temperature range Tstg: -40 to 125℃; (7)isolation Voltage VIsol: 2500V; (8)screw torque: 3/3 Nm.
Features
MG75Q2YS1 features: (1)High input impednace; (2)high speed: tf=0.5 μs; (3)Low saturation voltage: 4.0V; (4)enhancement mode; (5)Includes a complete half bridge in one package; (6)The electrodes are Isolated from case.
Diagrams
