Product Summary

The MG25Q6ES43 is a 4.0V silicon N channel IGBT. The applications of it are high power switching applications, motor control applications.

Parametrics

MG25Q6ES43 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector current: IC: 25A, ICP: 50A; (4)forward current: IF: 25A, IFM: 50A; (5)collector power dissipation: 200W; (6)junction temperature: 150℃; (7)storage temperature range: -40 to 125℃; (8)isolation voltage: 2500V(AC 1 minute); (9)screw torque: 3N.m.

Features

MG25Q6ES43 features: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)enhancement-mode; (4)low saturation voltage: VCE(sat)=4.0V(max.); (5)high speed: tf=0.5us(max.), trr=0.5us(max.).

Diagrams

MG25Q6ES43 block diagram