(China (Mainland))
Product Summary
The MG25Q1BS11 is an N channel IGBT module.
Parametrics
MG25Q1BS11 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200V; (2)Gate-emitter voltage, VGES: ±20V; (3)Collector current, DC, IC: 25A; 1ms, ICP: 50A; (4)Collector power dissipation, PC: 150W; (5)Junction temperature, Tj: 150℃; (6)Storage temperature range, Tstg: -40 to 125℃; (7)Isolation voltage, Visol: 2500V.
Features
MG25Q1BS11 features: (1)High input impedance; (2)High speed: tf=1.0μs; (3)Low saturation voltage: VCE=2.7V; (4)Enhancement-mode; (5)The electrodes are isolated from case.
Diagrams
