(China (Mainland))
Product Summary
The MG25N2YS1 is a transistor module. The MG25N2YS1 is specified by a type number using the format shown below to indicate the characteristics.
Parametrics
MG25N2YS1 absolute maximum ratings: (1)VCBO: 1100V; (2)VCEX: 1100V; (3)VCEO: 900V; (4)VEBO: 7V; (5)IC(DC): 15A; (6)ICP(1msec): 30A; (7)IF(DC): 15A; (8)IFM(1msec): 30A; (9)IB: 1.5A; (10)PC: 150W; (11)hEF(min): 100.
Features
MG25N2YS1 features: (1)Electrodes are isolated from the heat sink; (2)High DC current gain hEF(80 or 100min); (3)Low saturation voltage; (4)Wide safe operating area.
Diagrams
