Product Summary

The MG150J7KS60 is a silicon N channel IGBT.

Parametrics

MG150J7KS60 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 600 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC: 150A; 1 ms, ICP: 300A; (4)Forward current, DC, IF: 150A; 1 ms, IFM: 300 A; (5)Collector power dissipation (Tc = 25℃), PC: 750 W.

Features

MG150J7KS60 features: (1)Integrates inverter and brake power circuit into a single package; (2)The electrodes are isolated from case; (3)Low thermal resistance; (4)VCE (sat) = 1.6 V (typ.).

Diagrams

MG150J7KS60 block diagram