Product Summary

The MG100Q2YS11 is a Silicon N Channel IGBT module.

Parametrics

MG100Q2YS11 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200V; (2)Gate-emitter voltage, VGES: ±20V; (3)Collector current, DC, IC: 100A; 1ms, ICP: 200A; (4)Forward current, DC, IF: 100A; 1ms, IFM: 200A; (5)Collector power dissipation, PC: 800W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, Visol: 2500V.

Features

MG100Q2YS11 features: (1)High input impedance; (2)High speed, tf=1.0μs, trr=0.5μs; (3)Low saturation: VCE=2.7V; (4)Enhancement mode; (5)The electrodes are isolated from case; (6)Includes a complete half bridge card in one package.

Diagrams

MG100Q2YS11 block diagram