IXDN75N120

IXDN75N120, High Voltage IGBT, 1200V, 75A, 660W, IXYS Corporation

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Price:: US $45.00~57.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 30 :	57.00 / Piece
31 ~ 60 :	50.00 / Piece
61 ~ 90 :	45.00 / Piece

PartNumber:: IXDN75N120

Brand:: IXYS Corporation - ixys | D/C: 09+

Availability:: Supply Ability: 1000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-03-20

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Part Number:IXDN75N120
US $45.00 - 57.00
IXDN75N120

US $10.00 - 100.00 / Piece
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Product Summary

The IXDN75N120 is a High Voltage IGBT. The applications of the IXDN75N120 include Space savings, Easy to mount with 2 screws, High power density.

Parametrics

IXDN75N120 absolute maximum ratings: (1)VCES TJ = 25℃ to 150℃: 1200 V; (2)VCGR TJ = 25℃ to 150℃; RGE = 20 kΩ: 1200 V; (3)VGES Continuous: ±20 V; (4)VGEM Transient: ±30 V; (5)IC25 TC = 25℃: 150 A; (6)IC90 TC = 90℃: 95 A; (7)ICM TC = 90℃, tp = 1 ms: 190 A; (8)RBSOA VGE = ±15 V, TJ = 125℃, RG = 15Ω, ICM = 150 A, Clamped inductive load, L = 30 μH, VCEK < VCES, tSC VGE = ±15 V, VCE = VCES, TJ = 125℃: 10 μs; (9)PC, TC = 25℃, IGBT: 660 W; (10)Visol: 2500 V.

Features

IXDN75N120 features: (1)NPT IGBT technology; (2)low saturation voltage; (3)low switching losses; (4)square RBSOA, no latch up; (5)high short circuit capability; (6)positive temperature coefficient for; (7)easy paralleling; (8)MOS input, voltage controlled; (9)International standard package miniBLOC.