(China (Mainland))
Product Summary
The FS75R12KE3_B9 is an IGBT-Module.
Parametrics
FS75R12KE3_B9 absolute maximum ratings: (1)collector emitter voltage: 1200V; (2)DC forward current: 75A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 355W; (8)gate-emitter peak voltage, VGES: ±20V.
Features
FS75R12KE3_B9 features: (1)rated resistance: 5kΩ; (2)deviation of R100: -5% to 5%; (3)power dissipation: 20mW; (4)B-value: 3375K.
Diagrams
