(China (Mainland))
Product Summary
The BSM50GD120DN2-B10 is an IGBT Power Module.
Parametrics
BSM50GD120DN2-B10 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, TC= 25℃, IC: 50A; TC= 80℃, IC: 45A; (5)Pulsed collector current,tp = 1 ms, TC= 25℃, ICpuls: 100A; TC= 80℃, ICpuls: 90A; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 350W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -55 to +150℃.
Features
BSM50GD120DN2-B10 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate; (5)E3226: long terminals, limited current per terminal.
Diagrams
