Product Summary

The BSM50GD120DN2E3226 is an IGBT Power Module.

Parametrics

BSM50GD120DN2E3226 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, TC= 25℃, IC: 50A; TC= 80℃, IC: 45A; (5)Pulsed collector current,tp = 1 ms, TC= 25℃, ICpuls: 100A; TC= 80℃, ICpuls: 90A; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 350W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -55 to +150℃.

Features

BSM50GD120DN2E3226 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate; (5)E3226: long terminals, limited current per terminal.

Diagrams

BSM50GD120DN2E3226 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM50GD120DN2E3226
BSM50GD120DN2E3226
Infineon Technologies
IGBT Modules N-CH 1.2KV 50A
Data Sheet
0-6: $69.46
6-10: $65.80
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(USD)		 Quantity
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Data Sheet
0-1: $35.08
1-10: $31.58
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Data Sheet
0-1: $36.45
1-5: $34.63
5-10: $32.81
10-50: $30.13
BSM50GB120DN2
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IGBT Modules 1200V 50A DUAL
Data Sheet
0-1: $44.28
1-5: $42.07
5-10: $39.85
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Data Sheet
0-1: $58.01
1-10: $52.20
BSM50GB60DLC
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IGBT Modules 600V 50A DUAL
Data Sheet
0-1: $25.46
1-10: $22.92
BSM50GD120DLC
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Data Sheet
0-1: $63.47
1-10: $57.12