(China (Mainland))
Product Summary
The BSM50GB120DN2 is an IGBT power module.
Parametrics
BSM50GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ, VCGR: 1200 V; (3)Gate-emitter voltage, VGE: ± 20 V; (4)DC collector current TC = 25℃, IC: 78 A; (5)DC collector current TC = 80℃, IC: 50 A; (6)Pulsed collector current, tp = 1 ms TC = 25℃: 156 A; (7)Pulsed collector current, tp = 1 ms TC = 80℃: 100 A; (8)Power dissipation per IGBT TC = 25℃, Ptot: 400 W; (9)Chip temperature, Tj: + 150℃.
Features
BSM50GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BSM50GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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BSM50GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A CHOPPER |
Data Sheet |
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BSM50GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB170DN2 |
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IGBT Modules 1700V 50A 500W HALF-BRIDGE |
Data Sheet |
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BSM50GB60DLC |
Infineon Technologies |
IGBT Modules 600V 50A DUAL |
Data Sheet |
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BSM50GD120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A 3-PHASE |
Data Sheet |
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