Product Summary

The BSM50GB120DN2 is an IGBT power module.

Parametrics

BSM50GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ, VCGR: 1200 V; (3)Gate-emitter voltage, VGE: ± 20 V; (4)DC collector current TC = 25℃, IC: 78 A; (5)DC collector current TC = 80℃, IC: 50 A; (6)Pulsed collector current, tp = 1 ms TC = 25℃: 156 A; (7)Pulsed collector current, tp = 1 ms TC = 80℃: 100 A; (8)Power dissipation per IGBT TC = 25℃, Ptot: 400 W; (9)Chip temperature, Tj: + 150℃.

Features

BSM50GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM50GB120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM50GB120DN2
BSM50GB120DN2

Infineon Technologies

IGBT Modules 1200V 50A DUAL

Data Sheet

0-1: $44.28
1-5: $42.07
5-10: $39.85
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(USD)
Quantity
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Data Sheet

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1-10: $31.58
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Infineon Technologies

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Data Sheet

0-1: $36.45
1-5: $34.63
5-10: $32.81
10-50: $30.13
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Infineon Technologies

IGBT Modules 1200V 50A DUAL

Data Sheet

0-1: $44.28
1-5: $42.07
5-10: $39.85
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1-10: $22.92
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Data Sheet

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