Product Summary

The BSM10GD120DN2 is a 1200V IGBT power module.

Parametrics

BSM10GD120DN2 aboslute maximum ratings:(1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:15A, TC = 80℃:15A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:20A,TC = 80℃:30A; (6)Power dissipation per IGBT TC = 25℃:80W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-40℃ to + 125℃.

Features

BSM10GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM10GD120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM10GD120DN2
BSM10GD120DN2

Infineon Technologies

IGBT Modules 1200V 10A FL BRIDGE

Data Sheet

0-1: $24.18
1-5: $22.99
5-10: $21.79
10-50: $18.67
BSM10GD120DN2E3224
BSM10GD120DN2E3224

Infineon Technologies

IGBT Modules N-CH 1.2KV 15A

Data Sheet

0-1: $24.18
1-5: $22.99
5-10: $21.79
10-50: $18.67