Product Summary

The BSM50GAL120D is an IGBT Power Module.

Parametrics

BSM50GAL120D absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, IC: 50A; (5)Pulsed collector current, ICpuls: 100A; (6)Power dissipation, Ptot: 400W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃.

Features

BSM50GAL120D features: (1)Single switch with chopper diode at collector; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM50GAL120D block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM50GAL120DN2
BSM50GAL120DN2

Infineon Technologies

IGBT Modules 1200V 50A CHOPPER

Data Sheet

0-1: $35.08
1-10: $31.58
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM50GAL120DN2
BSM50GAL120DN2

Infineon Technologies

IGBT Modules 1200V 50A CHOPPER

Data Sheet

0-1: $35.08
1-10: $31.58
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BSM50GB120DLC

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Data Sheet

0-1: $36.45
1-5: $34.63
5-10: $32.81
10-50: $30.13
BSM50GB120DN2
BSM50GB120DN2

Infineon Technologies

IGBT Modules 1200V 50A DUAL

Data Sheet

0-1: $44.28
1-5: $42.07
5-10: $39.85
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Data Sheet

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1-10: $57.12