Product Summary
The BSM50GAL120D is an IGBT Power Module.
Parametrics
BSM50GAL120D absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, IC: 50A; (5)Pulsed collector current, ICpuls: 100A; (6)Power dissipation, Ptot: 400W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃.
Features
BSM50GAL120D features: (1)Single switch with chopper diode at collector; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSM50GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A CHOPPER |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM50GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A CHOPPER |
Data Sheet |
|
|
|||||||||||||
BSM50GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM50GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM50GB170DN2 |
Infineon Technologies |
IGBT Modules 1700V 50A 500W HALF-BRIDGE |
Data Sheet |
|
|
|||||||||||||
BSM50GB60DLC |
Infineon Technologies |
IGBT Modules 600V 50A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM50GD120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A 3-PHASE |
Data Sheet |
|
|