Product Summary

The BSM100GB120DN2K is an IGBT power module.

Parametrics

BSM100GB120DN2K absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage, RGE = 20 kΩ: 1200V; (3)Gate-emitter voltage: ±20V; (4)DC collector current: TC = 25℃: 145A,TC = 80℃: 100A; (5)Pulsed collector current, tp = 1 ms: TC = 25℃: 290A, TC = 80℃: 200A; (6)Power dissipation per IGBT: 700W; (7)Chip temperature: +150℃; (8)Storage temperature: -40℃ to +125℃.

Features

BSM100GB120DN2K features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM100GB120DN2K block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM100GB120DN2K
BSM100GB120DN2K

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-1: $66.47
1-5: $63.16
5-10: $59.86
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(USD)
Quantity
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Data Sheet

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1-10: $40.07
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Data Sheet

0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
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Infineon Technologies

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Data Sheet

0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
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Infineon Technologies

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Data Sheet

0-1: $82.74
1-10: $74.47