Product Summary
The IRG4RC20F is a Fast Speed IGBT.
Parametrics
IRG4RC20F absolute maximum ratings: (1)VCES Collector-to-Emitter Breakdown Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 22A; (3)IC @ TC = 100℃ Continuous Collector Current: 12 A; (4)ICM Pulsed Collector Current: 44A; (5)ILM Clamped Inductive Load Current: 44A; (6)VGE Gate-to-Emitter Voltage: ± 20 V; (7)EARV Reverse Voltage Avalanche Energy: 5.0 mJ; (8)PD @ TC = 25℃ Maximum Power Dissipation: 66W; (9)PD @ TC = 100℃ Maximum Power Dissipation: 26W; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 150℃.
Features
IRG4RC20F features: (1)Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode); (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs; (3)Industry standard TO-252AA package; (4)Combines very low VCE(on) with low switching losses.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRG4RC20F |
DIODE IGBT 600V D-PAK |
Data Sheet |
Negotiable |
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IRG4RC20FPBF |
International Rectifier |
IGBT Transistors 600V Fast 1-8kHz Single IGBT |
Data Sheet |
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IRG4RC20FTRPBF |
International Rectifier |
IGBT Transistors 600V Fast 1-8kHz Single IGBT |
Data Sheet |
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IRG4RC20FTRLPBF |
International Rectifier |
IGBT Transistors |
Data Sheet |
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IRG4RC20FTR |
DIODE IGBT FAST SPEED 600V D-PAK |
Data Sheet |
Negotiable |
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IRG4RC20FTRL |
DIODE IGBT FAST SPEED 600V D-PAK |
Data Sheet |
Negotiable |
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IRG4RC20FTRR |
DIODE IGBT FAST SPEED 600V D-PAK |
Data Sheet |
Negotiable |
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