Product Summary

The IRG4PF50W is an insulated gate bipolar transistor.

Parametrics

IRG4PF50W absolute maxing ratings: (1)VCES collector-to-emitter breakdown voltage: max=900V; (2)IC@Tc=25℃ continuous collector current: max=51A; (3)IC@Tc=100℃ continuous collector current: max=28A; (4)ICM pulsed collector current: max=204A; (5)ILM clamped inductive load current: max=204A; (6)VGE gate-to-emitter voltage: max=±20V; (7)EARV reverse voltage avalance energy: max=186mJ; (8)PD@TC=25℃ maximum power dissipation: max=200W; (9)PD@TC=100℃ maximum power dissipation: max=78W; (10)TJ TSTG operating junction and storage temperature range: -55 to+150℃; (11)Soldering temperature, for 10seconds: 300(0.063 in(1.6mm from case).

Features

IRG4PF50W features: (1)Optimized for use in welding and switch-mode power supply applications; (2)Industry benchmark switching losses improve efficiency of all power supply topologies; (3)50% reduction of Eoff parameter; (4)Low IGBT conduction losses; (5)Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability; (6)Lead-free.

Diagrams

IRG4PF50W block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRG4PF50W
IRG4PF50W
International Rectifier
IGBT WARP 900V 51A TO-247AC
Data Sheet
1-100: $2.30
IRG4PF50WD
IRG4PF50WD
International Rectifier
IGBT W/DIODE 900V 51A TO-247AC
Data Sheet
1-75: $4.02
IRG4PF50WD-201P
IRG4PF50WD-201P
International Rectifier
IGBT Modules
Data Sheet
0-1: $5.49
1-25: $4.01
25-100: $3.18
100-250: $3.05
IRG4PF50WPBF
IRG4PF50WPBF
International Rectifier
IGBT Transistors 900V Warp 20-100kHz
Data Sheet
0-1: $4.03
1-25: $2.94
25-100: $2.33
100-250: $2.23
IRG4PF50WDPBF
IRG4PF50WDPBF
International Rectifier
IGBT Transistors 900V Warp 20-100kHz
Data Sheet
0-1: $6.03
1-25: $4.41
25-100: $3.49
100-250: $3.36