Product Summary

The BU806 is a silicon Epitaxial Planar NPN power transistor in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. The BU806 can be used in horizontal output stages of 110℃ RT video displays. The applications are horizontal deflection for monochrome TVs.

Parametrics

BU806 absolute maximum ratings: (1)VCBO, Collector-base Voltage (IE = 0): 400V; (2)VCEV, Collector-emitter Voltage (VBE = -6V): 400V; (3)VCEO, Collector-emitter Voltage (IB = 0): 200V; (4)VEBO, Emitter-Base Voltage (IC = 0): 6 V; (5)IC, Collector Current: 8 A; (6)ICM, Collector Peak Current: 15 A; (7)IDM, Damper Diode Peak Forward Current: 10 A; (8)IB, Base Current: 2 A; (9)Ptot, Total Power Dissipation at Tcase < 25℃: 60 W; (10)Tstg, Storage Temperature: -65 to 150℃; (11)Tj, Max Operating Junction Temperature: 150℃.

Features

BU806 features: (1)STMicroelectronics preferred salestypes; (2)NPN darlingtons; (3)low base-drive requirements; (4)integrated antiparallel collector-emitter diode.

Diagrams

BU806 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
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BU806
BU806

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BU806
BU806

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

Data Sheet

Negotiable 
BU807
BU807

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

Data Sheet

Negotiable 
BU807FI
BU807FI

Other


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Negotiable 
BU807TU
BU807TU

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

Data Sheet

Negotiable 
BU808
BU808

Other


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Negotiable 
BU808-3PN
BU808-3PN

Other


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Negotiable