(China (Mainland))
Product Summary
The 2SK3174 is a Silicon N Channel MOS FET.
Parametrics
2SK3174 absolute maximum ratings: (1)Drain to source voltage VDSS: 60 V; (2)Gate to source voltage VGSS: ±10 V; (3)Drain current ID: 16 A; (4)Drain peak current ID(pulse): 32 A; (5)Channel dissipation Pch: 252 W; (6)Channel temperature Tch: 175℃; (7)Storage temperature Tstg: –55 to +150℃.
Features
2SK3174 features: (1)High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz); (2)Compact package; (3)Suitable for push - pull circuit.
Diagrams
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 2SK3174A_1377728 |
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Data Sheet |
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2SK3001 |
Other |
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Data Sheet |
Negotiable |
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2SK3009 |
Other |
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Data Sheet |
Negotiable |
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2SK3012 |
Other |
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Data Sheet |
Negotiable |
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2SK3013 |
Other |
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Data Sheet |
Negotiable |
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2SK3017 |
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Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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