Product Summary

The 2SC2395 is a silicon NPN epitaxial planar type transistor. It is suitable for 2-30MHz SSB linear power amplifier applications.

Parametrics

2SC2395 absolute maximum ratings: (1)collector base voltage, VCBO: 40V; (2)collector emitter voltage, VCES: 40V; (3)collector emitter voltage, VCEO: 18V; (4)emitter base voltage, VEBO: 4V; (5)collector current, IC: 5A; (6)collector power dissipation, PC: 40W; (7)junction temperature, Tj: 175℃; (8)storage temperature range, Tstg: -65 to 175℃.

Features

2SC2395 features: (1)specified 12.5V, 28MHz haraticeristics; (2)output power: Po=10Wpep min; (3)power gain: GP=17dB min; (4)collector effciency: ηC=35% min; (5)intermodulation distortion: IMD=-30dB max.

Diagrams

2SC2395 dimensions

2SC2000
2SC2000

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Data Sheet

Negotiable 
2SC2001
2SC2001

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Data Sheet

Negotiable 
2SC2002
2SC2002

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Data Sheet

Negotiable 
2SC2003
2SC2003

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Negotiable 
2SC2020
2SC2020

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Negotiable 
2SC2021
2SC2021

Other


Data Sheet

Negotiable