Product Summary
The PD4M440H is a MOSFET module.
Parametrics
PD4M440H absolute maximum ratings: (1)Drain-Source Voltage (VGS=0V), VDSS: 500V; (2)Gate -Source Voltage, VGSS: ±20V; (3)Continuous Drain Current, Duty=50%: 30(Tc=25℃)A; (4)Pulsed Drain Current, IDM: 60(Tc=25℃)A; (5)Total Power Dissipation, PD: 230 (Tc=25℃)W; (6)Operating Junction Temperature Range, Tjw: -40 to +150℃; (7)Storage Temperature Range, Tstg: -40 to +125℃; (8)Isolation Voltage (Terminals to Base AC, 1 min.), VISO: 2000V.
Features
PD4M440H features: (1)Dual MOSFETs Cascaded Circuit; (2)Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connectedin Parallel; (3)300KHzHigh Speed Switching Possible.
Diagrams
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PD4M440H |
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PD4M440L |
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PD4M441H |
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PD4M441L |
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