Product Summary

The MG75Q1BS11 is an N CHANNEL IGBT module. It is available for high power switching applications and motor control applications.

Parametrics

MG75Q1BS11 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector power dissipation: 300W; (4)junction temperature: 150℃; (5)storage temperature range: -40~125℃; (6)isolation voltage: 2500V; (7)screw torque: 2/3 N.m.

Features

MG75Q1BS11 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement-mode; (5)the electrodes are isolated from case.

Diagrams

MG75Q1BS11 block diagram