Product Summary

The MG75J2YS91 is a Silicon N Channel IGBT. It is designed for High Power Switching Applications and Motor Control Applications.

Parametrics

MG75J2YS91 absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Gate-emitter voltage: ±20 V; (3)Collector current: 150 A; (4)Forward current: 150 A; (5)Collector power dissipation (Tc = 25℃): 390 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -40 ~ 125 ℃; (8)Isolation voltage: 2500 (AC 1 min.) V; (9)Screw torque (Terminal / mounting): 3 / 3 N·m.

Features

MG75J2YS91 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed : tf = 0.30μs(Max) (IC = 75A), trr = 0.15μs(Max) (IF = 75A); (6)Low saturation voltage: VCE (sat) = 2.70V (Max) (IC = 75A).

Diagrams

MG75J2YS91 block diagram