Product Summary

The MG50Q2YS50 is an N channel IGBT. The applications of it are high power switching and motor control.

Parametrics

MG50Q2YS50 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector current: DC: 50A, 1ms: 100A; (4)forward current: DC: 50A, 1ms: 100A; (5)collector power dissipation: 400W; (6)junction temperature: 150℃; (7)storage temperature range: -40℃ to +125℃; (8)isolation voltage: 2500V; (9)screw torque: 3/3N·m.

Features

MG50Q2YS50 features: (1)high input impedance; (2)high speed:tf=0.5us(max.), trr=0.5us(max.); (3)low saturation voltage:VCE(sat)=4.0V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.

Diagrams

MG50Q2YS50 block diagram