Product Summary

The MG400J1US51 is an N channel IGBT.

Parametrics

MG400J1US51 absolute maximum ratings: (1)collector-emitter voltage: 600V; (2)gate-emitter voltage: ±20V; (3)collector current: DC: 400A, 1ms: 800A; (4)forward current: DC: 400A, 1ms: 800A; (5)collector power dissipation: 1500W; (6)junction temperature: 150℃; (7)storage temperature range: -40℃ to +125℃; (8)isolation voltage: 2500V; (9)screw torque: 2/3/3N·m.

Features

MG400J1US51 features: (1)high input impedance; (2)high speed: tf=0.3us(max.), trr=0.15us(max.); (3)low saturation voltage: VCE(sat)=2.7V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.

Diagrams

MG400J1US51 block diagram