Product Summary

The MG30V1BS41 is an N channel IGBT.

Parametrics

MG30V1BS41 absolute maximum ratings: (1)Junction Temperature, Tj: -40 to 150℃; (2)Storage Temperature, Tstg: -40 to 125℃; (3)Collector-Emitter Voltage (G-E SHORT), VCES: 1700 Volts; (4)Gate-Emitter Voltage (C-E SHORT), VGES: ±20 Volts; (5)Collector Current (Tc = 25℃), IC: 30 Amperes; ICP: 60A; (6)Forward current, IF: 30A; IFM: 60A; (7)Maximum Collector Dissipation (Tc = 25℃), Pc: 500 Watts.

Features

MG30V1BS41 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement mode; (5)High speed: tf=1.5μs, trr=0.3μs.

Diagrams

MG30V1BS41 block diagram