Product Summary

The MG300Q2YS45 is a silicon N channel IGBT. It is suitable for high power switching applications and motor control applications.

Parametrics

MG300Q2YS45 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC IC: 300A; 1ms ICP: 600A; (4)Forward current, DC IF: 300A; 1ms IFM: 600A; (5)Collector power dissipation, (Tc = 25℃) PC: 1800W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500V; (9)Screw torque (Terminal / mounting): 3/3 Nm.

Features

MG300Q2YS45 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement-mode; (5)the electrodes are isolated from case; (6)weight: 550g typ.

Diagrams

MG300Q2YS45 block diagram