Product Summary

The MG300Q1US2 is an insulated gate bipolar transistor. The applications of the device include GTR module, silicon N channel IGBT, high power switching applications and motor control applications.

Parametrics

MG300Q1US2 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 300A; 1ms, ICP: 600A; (4)forward current, DC, IF: 300A; 1ms, IFM: 600A; (5)collector power, PC: 2000W; (6)junction temperature, Tj: 150℃; (7)storage temperature range, Tstg: -40 to 125℃; (8)isolation voltage, Visol: 2500V.

Features

MG300Q1US2 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement mode; (5)the electrodes are isolated from case.

Diagrams

MG300Q1US2 block diagram