Product Summary

The MG300N1FK2 is a Silicon N Channel IGBT. It is suitable for High Power Switching Applications and Motor Control Applications.

Parametrics

MG300N1FK2 absolute maximum ratings: (1)Collector-emitter voltage VCES: 1200 V; (2)Gate-emitter voltage VGES: ±20 V; (3)Collector power dissipation (Tc = 25℃) PC: 2000 W; (4)Junction temperature Tj: 150℃; (5)Storage temperature range Tstg: -40 ~ 125℃; (6)Isolation voltage VIsol: 2500 (AC 1 minute)V ; (7)Screw torque (Terminal / mounting): 3 / 3 N·m.

Features

MG300N1FK2 features: (1)High input impedance; (2)High speed : tf = 0.3μs (Max.) Inductive load; (3)Low saturation voltage: VCE (sat) = 3.6V (Max.); (4)Enhancement-mode; (5)Includes a complete half bridge in one package; (6)The electrodes are isolated from case.

Diagrams

MG300N1FK2 block diagram