Product Summary

The MG15Q6ES51A is an N channel IGBT.

Parametrics

MG15Q6ES51A absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200V; (2)Gate-emitter voltage, VGES: ±20V; (3)Collector current, IC: 25A; icp: 50A; (4)Forward current, IF: 15A; IFM: 30A; (5)Collector power dissipation, PC: 145W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, Visol: 2500V.

Features

MG15Q6ES51A features: (1)The electrodes are isolated from case; (2)High input impedance; (3)6 IGBTs built into 1 package.

Diagrams

MG15Q6ES51A block diagram