(China (Mainland))
Product Summary
The BSM10GP120 is an IGBT-Module.
Parametrics
BSM10GP120 absolute maximum ratings: (1)repetitive peak reverse voltage, VRRM: 1600 V; (2)RMS forward current per chip, IFRMSM: 40 A; (3)DC forward current, TC = 80℃ Id: 10 A; (4)surge forward current tP = 10 ms, Tvj = 150℃: 230 A; (5)Grenzlastintegral tP = 10 ms, Tvj = 25℃ I2t: 450 A2s; (6)I2t - value tP = 10 ms, Tvj = 150℃: 260 A2s.
Features
BSM10GP120 features: (1)forward voltage, Tvj = 150℃, I F = 10 A VF: 0,9 to 0,95 V; (2)threshold voltage, Tvj = 150℃ V(TO): 0,8 V; (3)slope resistance, Tvj = 150℃ rT: 10,5 mΩ; (4)reverse current, Tvj = 150℃, VR = 1600 V IR: 2mA; (5)lead resistance, terminals-chip, TC = 25℃: 8 mW.
Diagrams
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 BSM10GP120 |
Infineon Technologies |
IGBT Modules 1200V 10A PIM |
Data Sheet |
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BSM10GP120_B9 |
Infineon Technologies |
IGBT Modules IGBT 1200V 10A |
Data Sheet |
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