Product Summary

The MG150Q2YS51 is an N channel IGBT. The applications of it include high power switching and motor control.

Parametrics

MG150Q2YS51 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector current: IC: 200/150A, ICP: 400/300A; (4)forward current: IF: 150A, IFM: 300A; (5)collector power dissipation: 1250W; (6)junction temperature: 150℃; (7)storage temperature range: -40℃ to +125℃; (8)isolation voltage: 2500V; (9)screw torque: 3/3N.m.

Features

MG150Q2YS51 features: (1)high input impedance; (2)high speed:tf=0.3us(max.) @inductive load; (3)low saturation voltage: VCE(sat)=3.6V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.

Diagrams

MG150Q2YS51 block diagram