IXFN44N80

IXFN44N80, HiPerFETTM Power MOSFETs Single MOSFET, 800V, 44A, 700W, IXYS Corporation

Rated 5 Rating 5 | reviews | Write a review

Price:: US $20.00~31.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 30 :	31.00 / Piece
31 ~ 60 :	25.00 / Piece
61 ~ 90 :	20.00 / Piece

PartNumber:: IXFN44N80

Brand:: IXYS Corporation - ixys | D/C: 10+

Availability:: Supply Ability: 500/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Mr. Jack's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-03-26

From Other Seller

Part Number:IXFN44N80
US $20.00 - 31.00
Quantity:

piece

Product Summary

The IXFN44N80 is a HiPerFET Power MOSFET Single MOSFET. The applications of the IXFN44N80 include DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls.

Parametrics

IXFN44N80 absolute maximum ratings: (1)VDSS, TJ= 25℃ to 150℃: 800 V; (2)VDGR, TJ= 25℃ to 150℃, RGS = 1MΩ: 800 V; (3)VGS, Continuous: ±20 V; (4)VGSM, Transient: ±30 V; (5)ID25, TC= 25℃: 44 A; (6)IL(RMS), Terminal (current limit): 176 A; (7)IDM, TC= 25℃: 176A; (8)IAR, TC= 25℃, 44A; (9)EAR TC = 25℃: 64 mJ; (10)EAS TC = 25: 4J; (11)dv/dt, IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ≤ 150℃, RG = 2 Ω: 5V/ns; (12)PD, TC = 25℃: 700 W.

Features

IXFN44N80 features: (1)International standard packages; (2)miniBLOC, with Aluminium nitride isolation; (3)Low RDS (on) HDMOSTM process; (4)Rugged polysilicon gate cell structure; (5)Unclamped Inductive Switching (UIS) rated; (6)Low package inductance; (7)Fast intrinsic Rectifier.