(China (Mainland))
Product Summary
The IXFN180N10 is a HiPerFET Power MOSFET Single MOSFET. The applications of the IXFN180N10 include DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls, Low voltage relays.
Parametrics
IXFN180N10 absolute maximum ratings: (1)VDSS, TJ= 25℃ to 150℃: 100 V; (2)VDGR, TJ= 25℃ to 150℃, RGS = 1MΩ: 100 V; (3)VGS, Continuous: ±20 V; (4)VGSM, Transient: ±30 V; (5)ID25, TC= 25℃: 180 A; (6)IL(RMS), Terminal (current limit): 100 A; (7)IDM, TC= 25℃: 720A; (8)IAR, TC= 25℃, 180A; (9)EAR TC = 25℃: 60 mJ; (10)EAS TC = 25: 3J; (11)dv/dt, IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ≤ 150℃, RG = 2 Ω: 5V/ns; (12)PD, TC = 25℃: 600 W.
Features
IXFN180N10 features: (1)International standard package; (2)Encapsulating epoxy meets UL 94 V-0, flammability classification; (3)miniBLOC with Aluminium nitride isolation; (4)Low RDS (on), HDMOSTM process; (5)Rugged polysilicon gate cell structure; (6)Unclamped Inductive Switching (UIS) rated; (7)Low package inductance; (8)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 IXFN180N10 |
Ixys |
MOSFET 180 Amps 100V 0.008 Rds |
Data Sheet |
Negotiable |
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