Product Summary
The FZ1200R12KL4C is an IGBT module.
Parametrics
FZ1200R12KL4C absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, ICnom: 1200A; IC: 1900A; (3)repetitive peak collector current, ICRM: 2400A; (4)total power dissipation, Ptot: 780kW; (5)gate-emitter peak voltage, VGES: ±20V.
Features
FZ1200R12KL4C features: (1)Product Category: IGBT Modules; (2)RoHS: No; (3)Product: IGBT Silicon Modules; (4)Configuration: Dual Common Emitter Common Gate; (5)Collector- Emitter Voltage VCEO Max: 1200 V; (6)Collector-Emitter Saturation Voltage: 2.1 V; (7)Continuous Collector Current at 25℃: 1900 A; (8)Gate-Emitter Leakage Current: 400 nA; (9)Power Dissipation: 7.8 KW; (10)Maximum Operating Temperature: + 125℃; (11)Package / Case: IHM130; (12)Maximum Gate Emitter Voltage: +/- 20 V; (13)Minimum Operating Temperature: - 40℃; (14)Mounting Style: SMD/SMT.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FZ1200R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FZ1200R12HE4 |
Infineon Technologies |
IGBT Modules |
Data Sheet |
|
|
|||||||||||||
FZ1200R12HP4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1200A |
Data Sheet |
|
|
|||||||||||||
FZ1200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 1200A SINGLE |
Data Sheet |
|
|
|||||||||||||
FZ1200R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
Data Sheet |
|
|
|||||||||||||
FZ1200R12KF5 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1200A |
Data Sheet |
|
|
|||||||||||||
FZ1200R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
Data Sheet |
|
|