(China (Mainland))
Product Summary
The FP50R12KT4 is an IGBT module.
Parametrics
FP50R12KT4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC nom: 50A at Tc=95℃; (3)repetitive peak collector current, ICRM: 100A; (4)total power dissipation, Ptot: 280W; (5)gate-emitter peak voltage, VGES: ±20V.
Features
FP50R12KT4 features: (1)repetitive peak reverse voltage, VRRM: 1200V; (2)DC forward current, IF: 50A; (3)repetitive peak forward current, IFRM: 100A; (4)I2t-value, I2t: 560A2s.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FP50R12KT4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 50A |
Data Sheet |
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FP50R12KT4_B11 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 50A |
Data Sheet |
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