(China (Mainland))
Product Summary
The FB10R06KL4G_B1 is an IGBT-Module.
Parametrics
FB10R06KL4G_B1 absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage Tvj =25℃ VCES: 600V; (2)Kollektor-Dauergleichstrom TC =80℃: 10A; (3)DC-collector current TC = 25℃ IC: 15A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1ms, TC =80℃ ICRM: 20A; (5)Gesamt-Verlustleistung total power dissipation TC = 25℃ Ptot: 55W; (6)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: ±20V.
Features
FB10R06KL4G_B1 features: (1)Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage VRRM: 800V; (2)Durchlaβstrom Grenzeffektivwert pro Chip RMS forward current per chip TC =80℃ IFRMSM: 23A; (3)Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output TC =80℃ IRMSmax: 25A; (4)Stoβstrom Grenzwert tP = 10ms, Tvj = 25℃ IFSM: 197A; (5)surge forward current tP = 10ms, Tvj = 150℃: 158A; (6)Grenzlastintegral tP = 10ms, Tvj = 25℃ I2t: 194A2s; (7)I2t - value tP = 10ms, Tvj = 150℃: 125A2s.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FB10R06KL4G_B1 |
Infineon Technologies |
IGBT Modules N-CH 600V 15A |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
FB1000 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
FB1000L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
FB100B0157K-- |
AVX |
Tantalum Capacitors - Solid Leaded 150 6.3V K |
Data Sheet |
Negotiable |
|
||||||||||||
|
FB1010 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
FB1010L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
FB10R06KL4 |
Infineon Technologies |
IGBT Modules N-CH 600V 15A |
Data Sheet |
|
|
||||||||||||
