(China (Mainland))
Product Summary
The F4-50R12MS4 is an IGBT Module. The application of the F4-50R12MS4 includes high frequency switching application.
Parametrics
F4-50R12MS4 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 50A; (3)Repetitive peak collector current, ICRM: 100A; (4)Total power dissipation, Ptot: 355W; (5)Gate-emitter peak voltage, VGES: ±20V.
Features
F4-50R12MS4 features: (1)High short circuit capability, self limiting short circuit current; (2)Low switching losses; (3)VCE with positive temperature coefficient.
Diagrams
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 F4-50R12MS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 70A |
Data Sheet |
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F4-50R06W1E3 |
Infineon Technologies |
IGBT Modules N-CH 600V 75A |
Data Sheet |
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F4-50R12KS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 70A |
Data Sheet |
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F4-50R12MS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 70A |
Data Sheet |
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F4-56 |
Triad Magnetics |
Power Transformers 6.0VA 56V CT @ 0.11A Chassis Mount |
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