(China (Mainland))
Product Summary
The CM50TF-12E is a mitsubishi IGBT module. The CM50TF-12E is designed for use in switching applications. The CM50TF-12E consists of one IGBT in a single configuration with a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Parametrics
CM50TF-12E absolute maximum ratings: (1)Junction Temperature, Tj: -40 to 150 ℃; (2)Storage Temperature, Tstg: -40 to 125 ℃; (3)Collector-Emitter Voltage (G-E SHORT), VCES: 600 Volts; (4)Gate-Emitter Voltage (C-E SHORT), VGES: ±20 Volts; (5)Collector Current (Tc = 25℃), IC: 50 Amperes; (6)Peak Collector Current (Tj £ 150℃), ICM: 100 Amperes; (7)Emitter Current, (Tc = 25℃), IE: 50 Amperes; (8)Peak Emitter Current, IEM: 100 Amperes; (9)Maximum Collector Dissipation (Tc = 25℃), Pc: 250 Watts; (10)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.), Viso: 2500 Vrms.
Features
CM50TF-12E features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery; (4)Free-Wheel Diode; (5)High Frequency Operation; (6)Isolated Baseplate for Easy Heat Sinking.
Diagrams
