(China (Mainland))
Product Summary
The BSM75GD120DN2E is an IGBT Power Module.
Parametrics
BSM75GD120DN2E absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage, RGE = 20 kΩ: 1200V; (3)Gate-emitter voltage: ±20V; (4)DC collector current: TC = 25 ℃: 103A, TC = 80 ℃: 75A; (5)Pulsed collector current, tp = 1 ms: TC = 25 ℃: 206A, TC = 80 ℃: 150A; (6)Power dissipation per IGBT, TC = 25℃: 520W; (7)Chip temperature: +150℃; (8)Storage temperature: -55℃ to +150℃.
Features
BSM75GD120DN2E features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
