Product Summary

The BSM75GAL120DN is an IGBT power module.

Parametrics

BSM75GAL120DN absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage VCGR: 1200V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 105A at TC = 25℃; 75A at TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 210A at TC = 25℃; 150A at TC = 80℃; (6)Power dissipation per IGBT, Ptot: 625W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -40 to + 125℃.

Features

BSM75GAL120DN features: (1)Single switch with chopper diode at collector; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM75GAL120DN block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GAL120DN2
BSM75GAL120DN2
Infineon Technologies
IGBT Modules 1200V 75A CHOPPER
Data Sheet
0-1: $34.32
1-10: $30.89
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GAL120DN2
BSM75GAL120DN2
Infineon Technologies
IGBT Modules 1200V 75A CHOPPER
Data Sheet
0-1: $34.32
1-10: $30.89
BSM75GAR120DN2
BSM75GAR120DN2
Infineon Technologies
IGBT Transistors 1200V 100A GAR CH
Data Sheet
0-1: $41.11
1-5: $39.05
5-10: $37.00
10-50: $34.70
BSM75GB120DLC
BSM75GB120DLC
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $43.16
1-10: $38.84
BSM75GB120DN2
BSM75GB120DN2
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $45.58
1-10: $41.02
BSM75GB120DN2_E3223
BSM75GB120DN2_E3223
Infineon Technologies
IGBT Modules N-CH 1.2KV 105A
Data Sheet
0-8: $41.48
8-10: $39.89
BSM75GB120DN2_E3223c-Se
BSM75GB120DN2_E3223c-Se
Infineon Technologies
IGBT Modules IGBT 1200V 75A
Data Sheet
0-6: $67.20
6-10: $60.60