(China (Mainland))
Product Summary
The BSM400GA170DLC is an IGBT-Module.
Parametrics
BSM400GA170DLC absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES: 1700 V; (2)Kollektor-Dauergleichstrom TC = 80 ℃ IC,nom: 400 A; (3)DC-collector current TC = 25 ℃ IC: 800 A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collctor current tP = 1 ms, TC=80℃ ICRM: 800 A; (5)Gesamt-Verlustleistung total power dissipation TC=25℃, Transistor Ptot: 3120 W; (6)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: +/- 20V V.
Features
BSM400GA170DLC features: (1)Breakdown Voltage [Collector to Emitter]: 1.70 kV; (2)Power Dissipation: 3.12 kW; (3)RoHS: Non-Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BSM400GA170DLC |
Infineon Technologies |
IGBT Modules 1700V 400A SINGLE |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
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BSM400GA120DL |
Other |
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Data Sheet |
Negotiable |
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BSM400GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
Data Sheet |
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BSM400GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
Data Sheet |
Negotiable |
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BSM400GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
Data Sheet |
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BSM400GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 400A |
Data Sheet |
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BSM400GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 400A |
Data Sheet |
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